负偏压温度不稳定性
材料科学
PMOS逻辑
德拉姆
钝化
跨导
光电子学
晶体管
阈值电压
金属浇口
MOSFET
电容
电气工程
排水诱导屏障降低
NMOS逻辑
电压
纳米技术
图层(电子)
栅氧化层
工程类
化学
电极
物理化学
作者
Won Ju Sung,Hyun Seung Kim,Jung H. Han,S. Park,Jeong-Hoon Oh,Hyodong Ban,Jooyoung Lee
标识
DOI:10.1109/irps48203.2023.10117706
摘要
Conventional techniques for negative bias temperature instability (NBTI) improvement were evaluated to apply high-k metal gate (HKMG) for commercial DRAM applications. This research evaluated the role of several essential fabrication process on the PMOS employing channel SiGe (cSiGe) to contain NBTI. At the interlayer (IL), the RF nitridation (RFN) caused radical-induced re-oxidation, and capacitance equalized thickness (CET) increase. Then, reducing nitrogen (N) was not enough to refrain NBTI. On the other hand, modifying de-coupled plasma nitridation (DPN) on the high-k layer was effective to suppress threshold voltage degradation via NBTI with minimized transistor drain-induced barrier lowering (DIBL) degradation. Also, the research proves that the process window of hydrogen (H) passivation must be optimized for low-power DRAM applications since the H passivation improved transconductance, but degraded NBTI.
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