材料科学
光电探测器
光电子学
光电流
薄膜
制作
无定形固体
带隙
光电导性
比探测率
半导体
基质(水族馆)
暗电流
纳米技术
有机化学
化学
病理
地质学
替代医学
海洋学
医学
作者
Jing Zhong,Xi Zhang,Gang Xiang
标识
DOI:10.1021/acsami.3c14421
摘要
Owing to its high stability, suitable absorption band gap, and fast response time, MoSe2 has attracted the most attention in transition-metal dichalcogenides (TMDCs) for photodetector (PD) applications. In this study, based on centimeter-scale smooth amorphous MoSe2 (a-MoSe2) thin films with thicknesses varying from 6.5 to 62.5 nm on a-SiO2/Si substrates prepared by polymer-assisted deposition, metal-semiconductor-metal-structured self-powered a-MoSe2 PDs are designed and fabricated. Our data show that the PD based on 9.5 nm thick a-MoSe2 thin film exhibits the highest values of photocurrent (Iph, 4.60 μA), photo-to-dark current ratio (PDCR, 3067), photoresponsivity (Rλ, 0.94 mA/W), and detectivity (D*, 4.29 × 1010 Jones), as well as the lowest values of noise-equivalent power (NEP, 2.33 × 10-11 W/Hz1/2) and photoresponse rise/decay time (61/58 ms) under a 405 nm laser with 5 mW power at zero bias, which are better than or comparable with those of previously reported PDs based on crystalline MoSe2 monolayers or other atomically thin 2D materials under bias voltage. The high-performance mechanism can be explained in terms of the energy band theory and volume modulation photoconductive gain model in a-MoSe2 with a spontaneous built-in electric field. Our work provides a scalable low-cost way for the design and fabrication of high-performance self-powered TMDC PDs.
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