High-power traveling wave photodetector with monolithically integrated bias circuitry network on a silicon photonics platform

We demonstrate the 4-stage traveling wave photodetector (TWPD) with monolithically integrated bias circuitry network based on a silicon photonics process. A bias circuitry network comprised of inductors is integrated at the input terminal to provide the bias voltage for device while prevent the leak of the RF signal into the voltage circuitry. Experimentally, the maximum RF powers of load terminal are 8 dB higher than input end at high frequencies, validated the effectiveness of RF-choke.