Study on the ordered growth of ZnO nanowire arrays on SiO2-mask patterned GaN template for ultraviolet light-emitting diodes

Highly position-controlled ZnO nanowire arrays are grown on a SiO₂-mask-patterned GaN substrate by hydrothermal method. The morphology of ZnO nanowires (NWs) can be modulated, and a comprehensive study is conducted for the first time. The morphology relies on the nucleation process that can be adjusted by varying growth time and solution concentration. Spectral responsibility curve and electroluminescent characteristics (EL) are measured, which both present great ultraviolet (UV) photoelectric properties. Meanwhile, the position of ZnO NWs is highly controllable as designed and the morphology of NWs are largely consistent, which pave the way to fabricate the high performance device resulting from the interaction between light.