Electromigration-induced void evolution and failure of Cu/SiCN hybrid bonds

The realization of high interconnect densities for three-dimensional integration demands development of new wafer-to-wafer bonding approaches. Recently introduced Cu-to-Cu wafer-to-wafer hybrid bonding schemes overcome scaling limitations, but like other Cu-based interconnect structures, they are prone to electromigration. Migration and growth of voids, induced by electromigration and mechanical stress, cause Cu-to-Cu hybrid bonds to fail. A comprehensive modeling approach is required to fully understand the complex dynamics of voids with their influencing factors, such as current density, temperature, and mechanical stress. In this work, we utilize such a modeling approach to perform studies of void migration through Cu-to-Cu hybrid bonds. The calculated velocities of the evolving void surface fully correspond to the experimentally observed behavior of voids migrating from the lower pad to the upper diffusion barrier of the upper pad, where they cause electrical failure. The migration velocity of a void in the upper pad is 20% higher than the migration velocity of a void in the bottom pad. Unbalance of the normal velocity distribution at the void surface leads to the transformation of the originally ellipsoid void into a teardrop shape. The simulations provide full insight in the impact of layout geometry, material properties, and operating conditions on void dynamics. In addition, the results enable targeted adjustments of the influencing factors to inhibit void migration and growth in order to delay or to fully prevent Cu-to-Cu hybrid bond failure.