Analytical Modeling of Silicon Nanowire Dielectric Modulated Reconfigurable FET Biosensor

In this paper, we present an analytical modeling of a Silicon Nanowire Dielectric Modulated Reconfigurable FET (SiNW-DMRFET) biosensor having a cavity under the control gate. By employing the 2D Poisson equation, we accurately model the electrostatic characteristics of the proposed biosensor such as surface potential, threshold voltage, electric field, and drain current. The main parameters used to identify biomolecules present in the cavity are the variations detected in the threshold voltage ( V TH ) and ON-current. The simulated and analytical results are compared with the performance of the published literature. We validate the reliability of our analytical approach by conducting simulations of the proposed device on Silvaco TCAD tool. The research conducted through both theoretical and experimental studies indicated that the proposed biosensor exhibited significant improvements in its sensitivity to I ON and V TH . Specifically, there was a rise of 54.65% in I ON sensitivity and 85.71% in V TH sensitivity. Furthermore, we show that our model is accurate and reliable by carefully comparing the results of our analysis with the results of the simulation.