蚀刻(微加工)
制作
材料科学
电介质
感应耦合等离子体
反应离子刻蚀
纵横比(航空)
光电子学
沉积(地质)
等离子体刻蚀
分析化学(期刊)
纳米技术
等离子体
化学
图层(电子)
物理
生物
病理
古生物学
医学
量子力学
色谱法
替代医学
沉积物
作者
Florian Krüger,Mark J. Kushner,Seung Bo Shim,Hyunjae Lee,Sang-Ki Nam
标识
DOI:10.1109/icops37625.2020.9717435
摘要
Inductively and capacitively coupled plasmas (ICP and CCP) are widely used in semiconductor device fabrication for a variety of etching and deposition processes. ICPs are typically used for metal and conductor etching while CCPs are typically used for dielectric etching. Decisions on these different applications of ICPs and CCPs were made largely on generations of devices whose characteristics are quite different from today's devices. In particular, high aspect ratio (HAR) devices (aspect ratios now exceeding 100) have more demanding requirements for anisotropy of incident ions and profile control, and less need for selectivity. Given these changing requirements, re-examination of the benefits and detriments of ICP vs. CCP for dielectric etching would provide needed guidance.
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