Nitrogen doping of ZnTe and its influence on CdTe∕ZnTe interfaces

The properties of nitrogen doped ZnTe films and in situ formed heterointerfaces to CdTe were investigated using photoelectron spectroscopy and electrical measurements. The p doping of ZnTe with nitrogen is controlled during physical vapor deposition with an additional nitrogen plasma source. The resistivity was determined by four-point measurements and a minimum resistivity of ρ=0.04Ωcm was found. The valence band offset of the CdTe∕ZnTe interface is EVBO=0.05eV.