Heterosurface GaAs light-emitting diodes

Light-emitting diodos consisting of p(GaAl)AB-pGaAs-nGaAs have been fabricated by LPE of Zn-doped (GaAl)As on n-type GaAs substrates. In this structure high quantum efficiency is expected due to the reduced internal absorption loss and the minority carrier confinement in the Zn-diffused layer. The emission intensity of this heterostructure with a diffused layer width of ~3 μm is around 20 times stronger than that of the Zn-doped homojunction diode.