量子点
退火(玻璃)
材料科学
纳米技术
电子迁移率
透射电子显微镜
制作
掺杂剂
薄膜晶体管
场效应晶体管
胶体
光电子学
晶体管
化学工程
兴奋剂
复合材料
电气工程
医学
替代医学
工程类
病理
图层(电子)
电压
作者
Ethan J. D. Klem,Harnik Shukla,Sean Hinds,D. D. MacNeil,Larissa Levina,Edward H. Sargent
摘要
Crosslinking molecules have recently been combined with colloidal quantum dots to build robust, closely packed, conductive solid-state devices. Ethanedithiol (EDT) has been used in PbS quantum dot photovoltaic devices to assist in film formation during fabrication. However, there is evidence that EDT influences the electronic properties of the colloidal quantum dot (CQD) films. We fabricate thin film field-effect transistors and find that EDT treatment increases the majority carrier mobility by a factor of 10. We attribute this increase to a reduction in interparticle spacing which we observe using transmission electron microscopy. However, this increase is accompanied by a decrease in the majority carrier concentration. Using x-ray photoelectron microscopy, we find that EDT reduces the extent of the surface oxidation which is acting as a p-type dopant in these materials. We find that by lightly reoxidizing, we can redope the CQD films and can do so without sacrificing mobility gains.
科研通智能强力驱动
Strongly Powered by AbleSci AI