<title>Pulsed-laser deposition of boron nitride films on silicon</title>

Boron nitride (BN) films were deposited on (001) faces of silicon (Si) using pulsed excimer laser ablation at 308 nm and 248 nm. The films were analyzed by Fourier-transform-infrared (FTIR) transmission spectroscopy, x-ray photoelectron-spectroscopy (XPS) and by x-ray diffractometry (XRD). The films are boron rich and contain hexagonal BN (h-BN). They are x-ray amorphous. So far we found no evidence for the formation of cubic BN (c-BN) crystallites in the films.