Study of strain-compensated for 1310nm AlGaInAs/InP multi-quantum-well laser

This article reported on strain-compensated quantum well structure for AlGaInAs/InP and used the ALDS to do numerical simulation for lasers. It can be concluded that the introduction of appropriate strain opposite to well layer strain in barrier layer can improve the energy band structure of quantum wells and the limitation carriers. After testing, the laser had a low threshold current of 13.4mA and a slope efficiency of 0.54W/A at 25□. The quality of the quantum well has been improved by optimizing its strain and adopting strain-compensated methods.