In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing

An in-situ mnitoring technique for the temperature profile of a Si wafer during millisecond rapid thermal annealing has been developed. By analyzing the oscillation observed in transient reflectivity of the Si wafer during annealing, we obtain a transient temperature profile with a millisecond time resolution. Since this measurement is based on optical interference, a highly sensitive temperature measurement with an accuracy of 2 K is expected. Using this measurement technique, we controlled Si wafer sutface temperature during thermal plasma jet irradiation with the heating and cooling rates in the order of 10^4 to 10^5 K/s.