AMOLED公司
阈值电压
材料科学
电容器
电容
有机发光二极管
电压
晶体管
光电子学
电子工程
电气工程
复合材料
工程类
电极
薄膜晶体管
物理
图层(电子)
有源矩阵
量子力学
作者
Akriti Srivastava,Divya Dubey,Manish Goswami,Kavindra Kandpal
标识
DOI:10.1016/j.mejo.2021.105266
摘要
This paper proposes a novel topology for a pixel circuit with a voltage-programmed threshold voltage compensation technique for amorphous indium gallium zinc oxide thin-film transistor (a-IGZO TFT) used in flexible AMOLED (Active-Matrix Organic Light-Emitting Diodes) displays. Simulation of the proposed circuit was done in Cadence Spectre using SPICE models for a-IGZO TFT, and the circuit utilizes six a-IGZO TFTs and one storage capacitor. Moreover, a detailed analytical analysis of the circuit is also done to estimate the error introduced during the emission phase. The simulation results showed that this pixel circuit offers excellent immunity to threshold voltage variation of driving TFT caused by bending and prolonged operation under gate bias. It can compensate for a wide range of VTH variations, i.e., 0 V–2.1 V, from the original 0.7 V of the TFT model, and the maximum percentage error in OLED current obtained was below 1.14%. The circuit proposed also alleviates the effect of electrical instability caused by threshold voltage shifts due to the compressive and tensile strain in the flexible substrate of the AMOLED display. The OLED current error was found to be below 0.0018% for a ±0.3% strain in the driving TFT.
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