Lv11
54 积分 2024-04-20 加入
High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility
4小时前
求助中
Improved gate reliability of normally off p-GaN gate HEMTs with in situ SiN cap-layer
4小时前
已完结
High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility
4小时前
已关闭
Band alignment at β-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
30天前
已完结
Demonstration and thermal reliability of an e-mode p-type hexagonal boron nitride gate AlGaN/GaN HEMT
2个月前
已完结
Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering
3个月前
已完结
NiO/GaN heterojunction diode deposited through magnetron reactive sputtering
3个月前
已完结
A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3
3个月前
已完结
Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors
8个月前
已完结
Normally-OFF Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with Low Leakage Current and High Breakdown Voltage (825 V)
8个月前
已完结
皖公网安备34019202002308
