Synthesis and detailed characterizations of Ag nanoparticles coated In2O3 nanostructured devices: An analytical and experimental approach

The impact of a high-performance nanostructured device using metal nanoparticle (NP) deposition is studied in this paper. Two devices, namely, a silver (Ag) NP coated indium oxide (In2O3) nanostructured device and a bare In2O3 nanostructured device, were fabricated by glancing angle deposition aided electron beam vacuum coating system to study the impact of Ag NPs over In2O3 nanostructures. The morphology of Ag NPs, as-fabricated nanostructures, and growth regions was analyzed using field emission scanning electron microscopy. The formation of Ag3O4 monoclinic crystal structures was confirmed by high-resolution x-ray diffraction profiles. The current density (J)-voltage (V) plot shows the modulating performances of an Ag NP coated In2O3 nanostructured device due to the occurrence of trap states originated from the incorporation of Ag NPs. For in-depth analyses of the impact of Ag NPs, frequency-dependent capacitance (C)-V, conductance (G)-V, and impedance (Z)-V characteristics were analyzed. A free charge carrier concentration (Nd) of ∼8.23 × 1016/cm3, a trap concentration (NT) of ∼1.48 × 1017/cm3, and a significant increment in conductance were observed for an Ag NP coated In2O3 nanostructured device (∼23.36 μS) than the bare In2O3 nanostructured device (∼13.05 μS) at a high frequency of 2 MHz. The delta-depletion model was implemented to obtain the C-V plots to match the experimental data adequately. The Ag NP coated In2O3 nanostructured device was further investigated by an analytical series circuit model, which manifests that the device can be used as catalysts, medical devices, etc.