绝缘栅双极晶体管
晶闸管
电气工程
功率半导体器件
双极结晶体管
门极关断晶闸管
集成门极换流晶闸管
功率(物理)
电流注入技术
光电子学
晶体管
材料科学
电压
计算机科学
门驱动器
电子工程
逆变器
逻辑门
二极管
作者
Jakob Teichrib,Rik W. De Doncker
出处
期刊:European Conference on Power Electronics and Applications
日期:2019-09-01
被引量:1
标识
DOI:10.23919/epe.2019.8914809
摘要
The performance of inverters strongly depends on the characteristics of the employed semiconductor devices. Bound to a trade-off between conduction- and switching-optimization, these devices require a decision for the optimal loss balance. In this work, a new medium-voltage semiconductor device consisting of both thyristor-based and transistor-based components is proposed. The goal is reduction of losses in both conduction and switching domain. The circuitry and switching pattern is described and the improvement of overall losses is investigated by FEM-simulation to give an theoretical outlook on the benefits of the device. A selection of parameters is adapted to analyze the impact on the performance. It is shown that the overall losses can be significantly reduced by minor substitution of Gate-Commutated Thyristor (GCT) silicon area with that of Insulated-Gate Bipolar Transistor (IGBT).
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