A New silicon-on-Insulator Structure of Metal-Oxide-Semiconductor Field Effect Transistor to Reduce Self-Heating Effect

A new silicon-on-insulator (SOI) device structure is proposed. This new design provides a new path to reduce the temperature of the channel of SOI metal-oxide-semiconductor field effect transistor (MOSFET). The device has been verified in two-dimensional device simulation. The new structure reduces the self-heating effect of SOI MOSFET and decreases the negative differential transconductance.