(Al 0.5 Ga 0.5 ) 0.65 In 0.35 P/Ga 0.65 In 0.35 P double-heterostructure orange light-emitting diodes

Visible light-emitting diodes (LEDs) emitting at 615 run and employing the AlGalnP/GalnP double heterostructure (DH) grown on a lattice-matched GaAso.7P0.3 substrate have been fabricated for the first time. The external quantum efficiency of 0.156% for the orange LEDs can be achieved by introducing the GaP material as the current spreader and window layer for the DH LEDs.