Dielectric and ferroelectric anisotropy of intergrowth Bi4Ti3O12–PbBi4Ti4O15 single crystals

Intergrowth Bi4Ti3O12–PbBi4Ti4O15 single crystals were grown, and their dielectric and ferroelectric anisotropy were investigated along the a and c axes. Dielectric measurements revealed that the Curie temperature was 550 °C, which was lower than that of Bi4Ti3O12 (675 °C) and PbBi4Ti4O15 (570 °C). Remanent polarization was observed for intergrowth oxides not only along the a axis but also along the c axis, and the c-axis component is suggested to originate from Bi4Ti3O12 layers in the intergrowth structure.