光电探测器
响应度
材料科学
异质结
范德瓦尔斯力
光电子学
量子效率
吸收(声学)
带隙
比探测率
物理
分子
量子力学
复合材料
作者
Juanmei Duan,Phanish Chava,Mahdi Ghorbani‐Asl,Yangfan Lu,Denise Erb,Liang Hu,Ahmad Echresh,L. Rebohle,Artur Erbe,Arkady V. Krasheninnikov,M. Helm,Yu‐Jia Zeng,Shengqiang Zhou,S. Prucnal
标识
DOI:10.1021/acsami.1c24308
摘要
Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV-vis-NIR photodetectors. FePS3, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe2/FePS3 type-II n-p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (Rmax) of 52 mA W-1 and an external quantum efficiency (EQEmax) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe2/FePS3 is attributed to the built-in electric field in the MoSe2/FePS3 n-p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.
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