Boosted efficiency and lifetime of perovskite quantum dots light-emitting diode via NiOx/PEDOT:PSS dual hole injection layers

Perovskite quantum dots light-emitting diodes (PQLEDs) usually suffer from low efficiency due to the imbalanced carrier injection. Dual hole injection layers (HILs) with NiOx/polyethylene dioxythiophene:polystyrene sulfonate are applied to tune the carrier transport and recombination in fabricated PQLEDs. The fine control of the NiOx film enables the external quantum efficiencies of the PQLEDs to increase from 1.5% to 9.7%, and the lifetime of T50 at 400 cd/m2 is prolonged by about 13 times with the cooperation of dual HIL. The improved performance of PQLEDs is attributed to the achievement of favorable carrier transport balance and effective radiative recombination in the emission layer. We highlight the critical role of carriers balance via the HIL engineering on both the efficiency and stability of PQLEDs.