非阻塞I/O
镍
材料科学
微晶
氧化镍
金属
电阻率和电导率
薄膜
氧化物
化学工程
分析化学(期刊)
冶金
化学
纳米技术
色谱法
催化作用
有机化学
工程类
电气工程
作者
Yow Jon Lin,Ting-Hong Su,Po-Chih Kuo,Hsing Cheng Chang
标识
DOI:10.1016/j.matchemphys.2021.125345
摘要
The effect of nickel content on the electrical properties of the sol-gel grown NiO films is determined. NiO is a metal-deficient and oxygen-rich metal oxide. An increase in the concentration of nickel acetate during the growth process leads to an increase in the thickness of NiO films, so the crystallite size and the hole concentration increase. There is a change in the hole concentration in NiO films because there is competition between the density of nickel vacancies (VNi), oxygen interstitials and Ni3+. Transformation from Ni2+ to Ni3+ is an offset to the induced lattice relaxation due to transformation from VNi to VNi2−, so VNi and Ni3+ coexist in NiO. The results of this study show the defect-related p-type conductivity of NiO films.
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