捷克先令
薄膜
材料科学
溅射沉积
拉曼光谱
氩
结晶
分析化学(期刊)
溅射
体积流量
带隙
矿物学
化学工程
纳米技术
光学
光电子学
化学
色谱法
物理
有机化学
工程类
量子力学
作者
Jian Feng Yang,Jiangtao Xu,Dagang Miao,Shouxiang Jiang
标识
DOI:10.1016/j.physb.2021.413375
摘要
In this study, CZTS thin films were fabricated by sputtering a single quaternary target followed by a sulfurization process, the compositional disparity in the sputtered films and sulfurized samples at different argon flow rates was investigated by EDX. The prepared CZTS thin films are then characterized by XRD, Raman scattering, SEM, and UV–Vis spectroscopy. It shows that the CZTS thin film deposited at an Ar flow rate of 300 sccm has the most Cu-poor and Zn-rich composition and the highest level of crystallization. Fewer voids are also observed in the film sputtered at 300 sccm of flow rate and the band gap energy of fabricated CZTS thin film is around 1.5 eV. These results indicate that compositional variation in the sputtered CZTS thin films controlled by the Ar flow rate has a significant impact on the properties of sulfurized CZTS thin films.
科研通智能强力驱动
Strongly Powered by AbleSci AI