Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H2 annealing with Pt gate electrode

In this work, we fabricated n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with a metal-oxide-semiconductor (MOS) interface of Y2O3/In0.53Ga0.47As. We investigated interfacial properties of the gate stack through the H2 ambient annealing process in MOSCAPs. We obtained an extremely low interface trap density of Dit = 1.8 × 1011 cm−2 eV−1. We compared the H2 annealing effect in different gate electrode materials of Ni and Pt. We determined that the Pt electrode was effective in maximizing the impact of H2 annealing. Also, we fabricated In0.53Ga0.47As-on-insulator MOS field-effect-transistors using an optimized annealing process, which showed more stable electrical characteristics than devices through the N2 ambient annealing process.