Design of a gate-coupled electrostatic discharge protection structure

摘要 提出了一种新型栅耦合型静电泄放(ESD)保护器件——压焊块电容栅耦合型保护管.该结构不仅解决了原有栅耦合型结构对特定ESD冲击不能及时响应的问题，而且节省了版图面积，提高了ESD失效电压.0.5 μm标准互补型金属氧化物半导体工艺流片测试结果表明，该结构人体模型ESD失效电压超过8 kV.给出了栅耦合型ESD保护结构中ESD检测结构的设计方法，能够精确计算检测结构中电容和电阻的取值. 关键词: 静电泄放 / 栅耦合 / 金属氧化物半导体场效应管 / 压焊块电容 Abstract A novel gate-coupled electrostatic discharge (ESD) protection structure, called bonding-pad capacitance gate-coupled device, is designed. The new structure solves the problem of the traditional gcMOS device not being able to give correct transient response to some specific ESD events. The device layout area is also reduced. The measured results show that the novel structure has a 26%—41% layout area reduction and a high ESD robustnesss greater than 8 kV in a standard 0.5 μm single poly triple metal complementary metal-oxide-semiconductor process. Keywords: electrostatic discharge / gate-coupled / metal-oxide-semiconductor field-effect transistor / pad capacitance 作者及机构信息 王 源, 贾 嵩, 孙 磊, 张钢刚, 张 兴, 吉利久 Authors and contacts 参考文献 施引文献