机车
材料科学
硅
形态学(生物学)
氮化硅
氮化物
光电子学
纳米技术
图层(电子)
地质学
古生物学
出处
期刊:Electrochemistry
[The Electrochemical Society of Japan]
日期:2001-08-05
卷期号:69 (8): 608-611
标识
DOI:10.5796/electrochemistry.69.608
摘要
The effects of the silicon-rich silicon nitride film on the morphology of LOCOS were investigated. Silicon nitride films were prepared by CVD with volume ratios of NH3 to SiH4 of 1.5, 9, 90, and 450. The silicon-rich silicon nitride film is also effective as a mask against field oxidation. The silicon-rich silicon nitride film is tolerant to tensile stress during field oxidation, and it reduces the length of the bird’s beak. These effects of the silicon-rich silicon nitride film on the morphology of LOCOS are due to its higher viscosity than the stoichiometric silicon nitride film.
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