Ultrafast characteristics of InGaP-InGaAlP laser amplifiers

We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification. With a single pulse in the amplifier, we measure the differential gain and saturation energy of the amplifier, and changes in the optical spectrum of a pulse traveling through the amplifier. We also measure the ultrafast gain dynamics using a pump and probe technique. We find the ultrafast gain recovery time due to carrier heating is 400 fs/spl plusmn/30 fs. Our results differ quantitatively from those reported for InGaAsP and AlGaAs amplifiers.