薄膜晶体管
钝化
退火(玻璃)
无定形固体
材料科学
晶体管
镓
氧气
光电子学
分析化学(期刊)
纳米技术
电气工程
结晶学
化学
冶金
图层(电子)
有机化学
电压
工程类
作者
Wei-Tsung Chen,Shih-Yi Lo,Sung‐Shuo Kao,Hsiao‐Wen Zan,Chuang-Chuang Tsai,Jiunn-Yuan Lin,Chun‐Hsiung Fang,Chung‐Chun Lee
出处
期刊:IEEE Electron Device Letters
[Institute of Electrical and Electronics Engineers]
日期:2011-11-01
卷期号:32 (11): 1552-1554
被引量:177
标识
DOI:10.1109/led.2011.2165694
摘要
This letter discusses the reason for the instability of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) under both positive and negative bias stresses. This instability is significantly influenced by the oxygen content in the bulk IGZO and the surrounding environment. The as-fabricated low-temperature devices can only endure a single polarized bias stress. An a-IGZO TFT that is stable toward both positive and negative bias stresses with large relaxation times of 95 × 10 4 and 371 × 10 4 s, respectively, is achieved by annealing and passivation.
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