有效质量(弹簧-质量系统)
硅
材料科学
凝聚态物理
电子迁移率
兴奋剂
费米能级
杂质
电阻率和电导率
塞贝克系数
电子能带结构
多晶硅
电子
热导率
化学
光电子学
纳米技术
薄膜晶体管
物理
有机化学
图层(电子)
量子力学
复合材料
作者
David L. Young,Howard M. Branz,Fude Liu,R. C. Reedy,Bobby To,Qi Wang
摘要
We study transport mechanisms, effective mass, and band structure by measuring the resistivity, Hall, and Seebeck and Nernst coefficients in heavily phosphorus-doped polycrystalline silicon films made by thermal crystallization of amorphous silicon. We observe a change in transport mechanism which results in an increase in electron mobility from 10% to 80% of the single-crystal silicon mobility as the carrier concentration increases from 1019 to 1020 cm−3. Our measurements of effective mass at the Fermi level indicate that as the carrier concentration increases, there is a shift from impurity-band transport to conduction-band transport, and that the electron effective mass is lower in the impurity band than in the conduction band of Si. The shift to conduction-band transport improves electron mobility with carrier density by improving intragrain carrier mean free path lengths and relaxation times.
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