Effects of Delay Time and AC Factors on Negative Bias Temperature Instability of PMOSFETs
作者
Jih-san Li,Main-gwo Chen,Pi-Chun Juan,Kuan-Cheng Su
出处
期刊:IEEE International Integrated Reliability Workshop final report日期:2006-10-01卷期号:: 16-19被引量:5
标识
DOI:10.1109/irws.2006.305202
摘要
In this study, the delay-dependent negative bias temperature instability (NBTI) was performed and a power law relationship between the lifetime and the delay time was found. The AC lifetimes under dynamic stress as a function of duty cycle and frequency were also investigated. It was observed that the time-to-failure (TTF) has an exponential dependence on duty ratio and a power law dependency on frequency. An accurate AC model incorporated with duty ratio and frequency is proposed. The mechanisms due to the effect of recovery are discussed