Fabrication of $n$-Type CNT Field-Effect Transistor Using Energy Band Engineering Layer Between CNT and Electrode

A new concept of device structure that can selectively change the injection carrier type through a thin energy band engineering layer is proposed and demonstrated using the device simulation. As an example, the structure is applied to achieve the n-type field-effect transistor using carbon nanotube network (CNN). Tin oxide (SnO ₂ ) layer placed between an Au electrode and a CNN channel is used as an energy band engineering layer for enhancing an electron injection. By just adding the band engineering layer in the conventional p-type device, the n-type characteristics with -40 to +40 V bottom gate sweep is successfully demonstrated experimentally without other manipulations.