碳化硅
MOSFET
网络拓扑
香料
功率MOSFET
半导体器件建模
电子工程
拓扑(电路)
计算机科学
材料科学
电气工程
工程类
CMOS芯片
晶体管
计算机网络
电压
冶金
作者
Andrii Stefanskyi,Łukasz Starzak,Andrzej Napieralski
标识
DOI:10.23919/mixdes.2017.8005259
摘要
SPICE models of silicon carbide power MOSFETs provided by manufacturers currently present on the market have been compared. Model subcircuit topologies have been identified and described. Principal equations have been extracted and related to common MOSFET models.
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