Defect Engineering of Grain Boundaries in Lead‐Free Halide Double Perovskites for Better Optoelectronic Performance

Abstract Halide double perovskites (HDPs) are promising lead‐free perovskites for various optoelectronic applications. However, the device performances of HDPs are far below the optimized values, which open a critical question regarding the origin of low performance in these HDPs. In this article, using first‐principles calculations, it is found that some types of grain boundaries (GBs) are easy to form in polycrystalline HDPs. Importantly, the existence of low‐energy Σ5(310) GBs can induce harmful deep‐level defect states within the bandgaps of type‐I (e.g., Cs 2 AgInCl 6 ) and type‐II (e.g., Cs 2 AgBiCl 6 ) HDPs, which may dramatically reduce the device performances. Interestingly, it is found that the formation of some intrinsic defects and defect complexes could effectively eliminate these deep‐levels in type‐II and type‐I HDPs, respectively. Under some exactly predesigned growth conditions identified by utilizing thousands of chemicals through a potential screening process, these defects or defect complexes can spontaneously incorporate into the GB cores, meanwhile the harmful deep‐level defects in the bulk can also be effectively eliminated. In addition, the self‐passivated GBs could generate band bending, which may be beneficial for charge separation. The understanding of GB formation as well as the self‐passivation mechanism in HDPs can provide a new viewpoint and guidance for designing polycrystalline perovskites with improved optoelectronic performance.