像素
缩放比例
CMOS芯片
光电子学
Boosting(机器学习)
单光子雪崩二极管
二极管
雪崩二极管
光学
图像传感器
计算机科学
雪崩光电二极管
材料科学
物理
人工智能
探测器
数学
击穿电压
几何学
电压
量子力学
作者
Shoichi Shimada,Yusuke Otake,S. Yoshida,Y. Jibiki,M. Fujii,S. Endo,R. Nakamura,H. Tsugawa,Y. Fujisaki,Keiichi Yokochi,J. Iwase,K. Takabayashi,H. Maeda,K. Sugihara,K. Yamamoto,M. Ono,K. Ishibashi,S. Matsumoto,H. Hiyama,T. Wakano
标识
DOI:10.1109/iedm45625.2022.10019414
摘要
We present scaled down Single Photon Avalanche Diode (SPAD) pixels to prevent Photon Detection Efficiency (PDE) degradation under high ambient light. This study is carried out on Back-Illuminated (BI) 3D-stacked SPAD array sensors with 3.3, 3.0, and 2.5μm pixel pitches fabricated using a CMOS 300mm platform. To achieve pixel scaling, the developed pixels introduce a sub-micron avalanche region to prevent premature edge breakdown while allowing for a low Dark Count Rate (DCR). Moreover, optimized optical lenses enable scaled down pixels to achieve approximately 100% fill factor, thereby boosting the PDE at λ=940nm beyond 20%, even under sunlight conditions. These sensors offer cost-efficient and high accuracy depth-sensing capabilities, even under challenging ambient light conditions.
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