光电探测器
肖特基势垒
材料科学
光电子学
肖特基二极管
石墨烯
硅
金属半导体结
半导体
光电效应
纳米技术
二极管
作者
Qingguo Shao,Hao Qin,Chao Li,Kunpeng Cai,Jianxia Dong,Xuhui Liu,N. Cao,Xiaobei Zang
标识
DOI:10.1007/s13391-022-00384-2
摘要
By combing the carrier mobility of graphene with the excellent light absorption properties of silicon, ultra-shallow Schottky junction can be obtained, and can exist stably for a long time. The photoelectric property of Schottky junction is determined not only by graphene and silicon semiconductor layer, but also by the interface layer between the two. Through a series of optimizations, the performance of graphene/silicon Schottky junction photodetectors can be continuously improved. As a result, graphene/silicon Schottky junctions more promising for the development of next generation photodetectors with its stability, ease of preparation and sensitivity. In this review, we firstly give a brief introduction to Gr Schottky junction photodetectors, and then present a comprehensive review on the recent progress of optimizing Gr/Si Schottky junction photodetectors in the past few years, including light management engineering, band engineering and interfacial engineering. Finally, the current challenges are summarized and further perspectives are outlined.
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