放大器
电气工程
电阻式触摸屏
高电子迁移率晶体管
拓扑(电路)
电子工程
晶体管
工程类
CMOS芯片
电压
作者
Chupeng Yi,Yang Lu,Ziyue Zhao,Hengshuang Zhang,Bochao Zhao,Peixian Li,Xiaohua Ma,Yue Hao
标识
DOI:10.1109/lmwc.2022.3206269
摘要
In this letter, a ${K}$ -band high-efficiency power amplifier (PA) design using modified resistive-reactive hybrid continuous modes (HCMs) is presented. These modified modes can increase the real part of the fundamental impedance when the second harmonic impedances become resistive-reactive. This helps to reduce the impedance transformation ratio when applying modified modes in transistors with a small optimal impedance ( ${R} _{\rm opt}$ ), as well as making HCMs more practical in these transistors. For ${K}$ -band Satcom downlink applications, by using this method, combined with a compact output matching network (OMN) design, high performance, and high integration PA can be achieved. A $2\times1.2$ mm GaAs pHEMT PA operating at 17–24 GHz was designed and fabricated to verify the theory. Continuous wave measurements show that the saturation output power is greater than 0.5 W and an average power-added efficiency (PAE) of 42%.
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