Preparation and characteristics of Ce3+-doped phosphate glass and O3+-implanted waveguide

Transparent optoelectronic material and its waveguide structure play an indispensable role in integrated optical circuits. We study the characteristics of the Ce3+-doped phosphate glass including the transmittance and photoluminescence spectra. Then, it designs a planar waveguide on the Ce3+-doped phosphate glass and demonstrates the light propagation at a 632.8-nm wavelength in the structure. The preparation conditions for the waveguide are the 6.0-MeV O3+ implantation with a fluence of 5×1014 ions/cm2. The SRIM 2013 is used to simulate the irradiation process, obtaining information such as implantation depth, implanted-ion distribution, and energy loss. The prism coupling method and the end-face coupling technique are adopted to excite guided modes in the structure of the waveguide. The RCM is utilized to calculate the variation in refractive index caused by the irradiation. The mode field distribution and the geometric dimension make the Ce3+-doped phosphate glass waveguide suitable for multi-functional structures and systems.