Simultaneously achieving high energy density and responsivity in submicron BaTiO 3 film capacitors integrated on Si

In the research field of energy storage dielectrics, the “responsivity” parameter, defined as the recyclable/recoverable energy density per unit electric field, has become critically important for a comprehensive evaluation of the energy storage capability of a dielectric. In this work, a high recyclable energy density and responsivity, i.e., W_rec=161.1 J cm^-3 and x=373.8 J (kV×m²) ^-1, have been simultaneously achieved in a prototype perovskite dielectric, BaTiO₃, which is integrated on Si at 500°C in the form of a submicron thick film. This ferroelectric film features a multi-scale polar structure consisting of ferroelectric grains with different orientations and inner-grain ferroelastic domains. A LaNiO₃ buffer layer is used to induce a {001} textured, columnar nanograin microstructure, while an elevated deposition temperature promotes lateral growth of the nanograins (in-plane diameter increases from ~ 10-20 nm at lower temperatures to ~ 30 nm). These preferably oriented and periodically regulated nanograins have resulted in a small remnant polarization and a delayed polarization saturation in the film’s P-E behavior, leading to a high recyclable energy density. Meanwhile, an improved polarizability/dielectric constant of the BaTiO₃ film has produced a much larger maximum polarization than those deposited at lower temperatures at the same electric field,  leading to a record-breaking responsivity for this simple perovskite.