电源抑制比
计算机科学
电气工程
工程类
电压
开关电源
作者
Sanghun Lee,Jaemyung Lim,Jaeduk Han
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2024-01-22
卷期号:71 (6): 3226-3230
被引量:3
标识
DOI:10.1109/tcsii.2024.3357206
摘要
A low-dropout (LDO) regulator controlled by an inverter-based amplifier is proposed to accomplish the latest processor power requirements. The proposed inverter-based amplifier provides a high DC gain in low-voltage operation. Furthermore, an auxiliary non-inverting amplifier is adopted to regulate the wider output voltage and enhance power supply rejection ratio (PSRR) performance. The proposed LDO regulator has been implemented in a 28-nm CMOS process and provides an output range of 0.2-1.05 V from the input range of 0.4-1.1 V. With the input voltage of 1 V, the settling time is within 71.8 ns for 50-mV overshoot and 63 ns for 47-mV undershoot. With the low input voltage of 600 mV, the settling time is within 269 ns for 81-mV overshoot and 182 ns for 84-mV undershoot. The measured values of PSRR are 44.3 dB and 25.0 dB at 100 kHz and 10 MHz at 1-V input voltage, respectively. The PSRR with 600-mV input voltage shows 30 dB up to 600 kHz.
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