凝聚态物理
材料科学
磁阻随机存取存储器
扭矩
反对称关系
沉积(地质)
随机存取存储器
物理
计算机科学
地质学
古生物学
沉积物
计算机硬件
数学物理
热力学
作者
Chun-Yi Lin,Po-Chuan Wang,Yu-Hao Huang,Wei-Chuan Liao,Ming Song,Xinyu Bao,Chi‐Feng Pai
出处
期刊:ACS materials letters
[American Chemical Society]
日期:2023-12-28
卷期号:: 400-408
标识
DOI:10.1021/acsmaterialslett.3c01376
摘要
Realizing robust field-free current-induced switching of perpendicular magnetization is of utmost importance to make spin–orbit torque (SOT) magnetic random-access memory (MRAM) possible. Diverging from the conventional field-free designs utilizing symmetric exchange interaction, this Letter explores the use of antisymmetric interlayer Dzyaloshinskii–Moriya interaction (i-DMI), which facilitates the emergence of noncollinear chiral spin configurations with wedge deposition. This work reveals a clear oscillatory behavior of the i-DMI strength with varying capping layer thickness, aligning with Bruno’s model. The strong i-DMI and sizable SOT efficiency observed in an optimized CoFeB/Pt(thick)/Co/Pt(thin) heterostructure result in a zero thermal critical switching current density of 1.67 × 1011 A/m2 and a thermal stability factor of 48.7, indicating the potential of such multilayer design for last-level cache memory applications. A counter-deposition method is also proposed to tackle the thickness variation issue caused by wedge deposition, offering a practical solution for implementing this field-free switching method.
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