Assessment of Trap Sensitivity in Dual Material Gate Nano-Ribbon FET for Different Gate Dielectric Materials

In this work, TCAD Sentaurus Device simulator is used to report the trap sensitivity of dual material gate (DMG) Nano Ribbon FET (NRFET) with different gate dielectrics. The trap sensitivity is extracted for various dielectrics: SiO 2 (k = 3.9), HfO 2 (k = 22), Si 3 N 4 (k = 7.5) for Gaussian trap distribution of acceptor type traps. For the DMG-NRFET, we have reported the trap sensitivity for changes in temperature, work function of the metal gate, energy peak position, and trap concentration variation. For acceptor type trap in DMG-NRFET, it has been observed that trap sensitivity is equivalent to or less than 100% while taking into account different gate dielectrics such as SiO 2 , HfO 2 , or Si 3 N 4 . Temperature reveals a notable variation in trap sensitivity for DMG-NRFET. It is observed that trap sensitivity increases as the dielectric constant of gate oxides increases, and the device under consideration reports an increase in trap sensitivity when temperature rises. Additionally, as the gate metal’s work function increases, the trap sensitivity decreases. The maximum trap sensitivity is100% for DMG-NRFET at high gate bias for variation in different parameters.