心烦意乱
重离子
单事件翻转
约束(计算机辅助设计)
事件(粒子物理)
概念证明
质子
计算机科学
过程(计算)
体积热力学
物理
核物理学
静态随机存取存储器
离子
数学
计算机硬件
统计
操作系统
量子力学
几何学
作者
Jinhua Han,Gang Guo,Jiancheng Liu,Qian Yin,Fuqiang Zhang,Xu Ma
标识
DOI:10.1109/led.2023.3325050
摘要
The burst generation rate (BGR) model is famous for predicting the proton and neutron single event effect (SEE) cross sections of electronic devices based on the heavy ion data, but we cannot find its proof process in the existing literature, and some ambiguities about one parameter exist. In this letter, we give the proof process of the original BGR model, and find that the above parameter should not appear in it. And we propose a modified model by assuming a reaction volume and imposing a constraint on the BGR functions. We carried out the proton single event upset (SEU) experiments for four SRAMs of different feature sizes. It turns out that the modified model performs much better than the original one in predicting the proton SEU cross sections of the four SRAMs.
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