激子
消灭
比克西顿
光子
兴奋剂
材料科学
光子学
库仑
光电子学
原子物理学
凝聚态物理
电子
物理
光学
量子力学
作者
Weijun Luo,Alexander A. Puretzky,Benjamin J. Lawrie,Qishuo Tan,Hongyan Gao,Anna K. Swan,Liangbo Liang,Xi Ling
出处
期刊:Nano Letters
[American Chemical Society]
日期:2023-10-25
卷期号:23 (21): 9740-9747
被引量:2
标识
DOI:10.1021/acs.nanolett.3c02308
摘要
Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton-exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton-exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purity g(2)(0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. This research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.
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