蚀刻(微加工)
等离子体刻蚀
基质(水族馆)
等离子体
氟碳化合物
氮气
聚合物
X射线光电子能谱
图层(电子)
分子
等离子体处理
氟
聚合
氧气
化学
分析化学(期刊)
沉积(地质)
化学工程
有机化学
古生物学
海洋学
物理
量子力学
沉积物
地质学
工程类
生物
作者
Woojin Park,Jonggu Han,Solee Park,Se Youn Moon
出处
期刊:Vacuum
[Elsevier]
日期:2023-10-01
卷期号:216: 112466-112466
标识
DOI:10.1016/j.vacuum.2023.112466
摘要
Low-pressure C4F8-based plasmas are widely employed during semiconductor fabrication processes, including deposition or etching with various gas mixtures. Oxygen gas, which suppresses the deposited layer via oxygen atom etching and increases the atomic fluorine density, is often added to the plasma to regulate polymer thickness. However, oxygen atoms are known to potentially cause severe damage to the devices and deteriorate the polymer-based surfaces. In this work we investigated the effects of substituting nitrogen for oxygen in C4F8/Ar plasmas. The addition of nitrogen dramatically reduced the thickness of the deposited layer on the Si substrate from 194.3 nm to 3.4 nm. Cross-sectional views of the Si substrate show that the interaction between the plasma and surface was switched from polymerization to etching by the introduction of nitrogen, as the CF2 radical density in the plasma decreased from 1.45 × 1020 m−3 to 1.18 × 1020 m−3 while the F atom density increased from 0.16 × 1020 m−3 to 0.43 × 1020 m−3. Plasma spectroscopy and surface analysis revealed that, the nitrogen atoms in the plasma were capable of scavenging the fluorocarbon molecules involved in polymer deposition through the formation of CN molecules and release of F atoms.
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