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50 积分 2024-11-06 加入
Optimization of Growth Temperature and V/III Ratio toward High-Quality Si-Doped Aluminum Nitride Thin Films on Sapphire
11天前
已完结
Si/AlN p-n heterojunction interfaced with ultrathin SiO2
11天前
已完结
Two-zone temperature AlN buffer layer-assisted growth of high-quality AlN films with controllable step bunching morphology on Si (111) substrates
11天前
已完结
Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD
11天前
已完结
Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process
12天前
已完结
Three‐step growth method for high quality AlN epilayers
15天前
已完结
Dislocations in 4H-SiC epilayers for power devices: Identification, formation, and regulation
19天前
已完结
Evolution of crystal quality and stress in MOVPE GaN-on-Si (111) induced by AlN interlayers
22天前
已完结
Room-temperature single-photon emission from III-nitride nanowire quantum dots: towards realization of the photonic qubit-based quantum computer
23天前
已完结
Epitaxial growth of a high-quality GaN/AlN heterostructure for the development of an AlN-back barrier high-electron-mobility-transistor
30天前
已完结
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