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Preparation and performance study of silicon modified polyurethane-based magnetorheological elastomeric polishing pad

材料科学 抛光 磁流变液 弹性体 聚氨酯 复合材料 磁流变弹性体 结构工程 工程类 光电子学 阻尼器
作者
D. Hu,Haotian Long,Jiabin Lu,Huilong Li,Jun Zeng,Qiusheng Yan
出处
期刊:Smart Materials and Structures [IOP Publishing]
卷期号:33 (10): 105005-105005 被引量:10
标识
DOI:10.1088/1361-665x/ad74c2
摘要

Abstract By employing magnetorheological elastomers (MREs) as polishing pads for chemical mechanical polishing (CMP), the magnetorheological properties are utilized to effectively control the flexible removal of materials in CMP. This study presents a method for preparing a silicon modified polyurethane (SPU)-based MRE polishing pad, aimed at demonstrating improved magnetorheological properties while preserving mechanical properties. The SPU-based MRE polishing pad was synthesized through the copolymerization of hydroxypropyl silicone oil and polyurethane prepolymers, with subsequent evaluation of its mechanical properties and polishing performance. Fourier transform infrared analysis confirmed the successful incorporation of the soft polydimethylsiloxane main chain from organosilicon into the polyurethane main chain, forming a soft segment that intertwines with the polyurethane main chain to create a soft-hard segment crosslinked structure. Comparison to polyurethane (PU)-based MRE, SPU exhibits significantly reduced hardness but improved wear resistance, as well as enhanced resistance to acid and alkali corrosion. Due to the presence of a soft matrix, SPU shows better magnetorheological effects (MR Effects) than PU-based MRE. Under a magnetic field intensity of 845 mT, the MR Effect of PU-based MRE is only 18%, while Si-15.96 and Si-16.79 SPU-based MREs can reach 84% and 110%, respectively. Although the material removal rate (MRR) of single-crystal SiC decreases after polishing with SPU compared to PU-based MRE, a higher surface quality is achieved, and the glazing degree of the polishing pad is significantly reduced. In the magnetic field-assisted polishing of single crystal SiC, the MRR increased by 38.4% when polished with an SPU-based MRE polishing pad, whereas the MRR was only 8.7% when polished with a PU-based MRE polishing pad. This study provides further evidence for the development and application of MRE in CMP.
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