Multifaceted nature of defect tolerance in halide perovskites and emerging semiconductors

卤化物 半导体 钙钛矿(结构) 材料科学 纳米技术 工程物理 化学 物理 光电子学 无机化学 结晶学
作者
Irea Mosquera‐Lois,Yi‐Teng Huang,Hugh Lohan,Junzhi Ye,Aron Walsh,Robert L. Z. Hoye
出处
期刊:Cornell University - arXiv [Cornell University]
被引量:3
标识
DOI:10.48550/arxiv.2408.16663
摘要

Lead-halide perovskites (LHPs) have shot to prominence as efficient energy conversion materials that can be processed using cost-effective fabrication methods. A widely-quoted reason for their exceptional performance is their ability to tolerate defects, enabling long charge-carrier lifetimes despite high defect densities. Realizing defect tolerance in broader classes of materials would have a substantial impact on the semiconductor industry. Significant effort has been made over the past decade to unravel the underlying origins of defect tolerance to design stable alternatives to LHPs comprised of nontoxic elements. However, it has become clear that understanding defect tolerance in LHPs is far from straightforward. This review discusses the models proposed for defect tolerance in halide perovskites, evaluating the experimental and theoretical support for these models, as well as their limitations. We cover attempts to apply these models to identify materials beyond the lead-halide system that could also exhibit defect tolerance, and the successes and pitfalls encountered over the past decade. Finally, a discussion is made of some of the important missing pieces of information required for a deeper understanding and predictive models that enable the inverse design of defect tolerant semiconductors.
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