空位缺陷
材料科学
氢
Crystal(编程语言)
凝聚态物理
原子物理学
物理
量子力学
计算机科学
程序设计语言
作者
Jinsong Jiang,Wei Hong,Tingyu Liu,Wenqi Song,Liying Yang
标识
DOI:10.1002/pssr.202400184
摘要
The behavior of self‐trapped holes (STH) adjacent to a H vacancy in K (KDP) crystals is investigated using the DFT + U and hybrid density functional calculations. The calculated results reveal that STH is located on one O atom near and introduces new defect energy levels in the bandgap. The hole tends to be self‐trapped and is more stable at room temperature along with partial lattice distortions. The STH in KDP crystals has a large migration barrier energy, implying a small mobility rate. The optical properties associated with STH are calculated and the emission peak is predicted to be 2.55 eV (487 nm) and the absorption peak to be 4.58 eV (271 nm), which is in good agreement with the experimental results.
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