光探测
光电探测器
材料科学
光电子学
异质结
暗电流
光电二极管
等离子体子
偏压
微电子
量子点
多光谱图像
硅
晶体管
纳米光子学
半导体
量子效率
近红外光谱
光谱学
纳米技术
红外线的
光子学
分光计
硫化铅
光学
动态范围
作者
Ya Wang,Faxin Wang,Xi Ran,Zaiming Du,Mingyang Yin,Hanyu Zhang,Xingchen Zhang,Jing Liu,Haifeng Yao,Jie Cao,Xinzheng Lan,Xin Tang,Huicheng Hu
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2026-08-24
卷期号:13 (17): 5272-5281
被引量:1
标识
DOI:10.1021/acsphotonics.6c01579
摘要
Abstract Spectral-selective photodetection across the visible to short-wave infrared (VIS–SWIR) range is highly desirable for advanced imaging and sensing applications. Here, we report a bias-switchable colloidal quantum-dot (CQD) n–p–n photodetector based on vertically stacked PbS and PbSe CQD heterojunctions with oppositely oriented built-in electric fields. This architecture allows electric-field redistribution under external bias, enabling controllable carrier transport and wavelength-dependent response. A ZnTe interlayer is introduced to suppress dark current and enhance bias-polarity-dependent spectral selectivity. By reversing the bias polarity, the device electrically switches between VIS + near-infrared (NIR) and NIR + SWIR detection modes within a single pixel. The photodetector exhibits low dark current densities and high detectivities of 4.3 × 1011, 2.6 × 1011, and 1.6 × 1011 Jones at 600, 1000, and 1550 nm, respectively. Integration with a silicon thin-film transistor readout circuit enables multimodal VIS–NIR–SWIR imaging, and multilayer perceptron–assisted learning further enables high-quality spectral reconstruction. These results highlight the potential of this CQD n–p–n architecture for multispectral imaging and compact computational spectrometer applications.
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